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RF switch for smartphones boasts very low insertion loss

Posted: 24 Nov 2015     Print Version  Bookmark and Share

Keywords:Toshiba  RF switch  smartphone  LTE  WCDMA 

Toshiba Corp.'s Semiconductor & Storage Products Co. has developed its next generation, proprietary SOI-CMOS Toshiba advanced RF SOI (TarfSOI) process optimised for RF switch applications that claims to achieve the lowest-class of insertion loss in the industry. Sample shipments of SP12T RF switch ICs for smartphones fabricated with the process will begin in January next year.

SP12T, a transmit RF switch IC with an integrated MIPI-RFFE controller for mobile applications, is suited to the 3GPP GSM, UMTS, WCDMA, LTE and LTE-Advanced standards. Products using TaRF8 realises 0.32dB at 2.7GHz. Compared with products using Toshiba's existing TaRF6 process, insertion loss is improved by 0.1dB while maintaining the same level of distortion characteristics.

With the trend in mobile communications towards high-data-rate, high-capacity data transfers, RF switch ICs used in mobile devices, including smartphones, require multi-port support and improved RF performance. Lowering insertion loss is recognized as a particularly important factor in this, as it decreases RF transmission power loss, which can support a longer battery life for mobile devices.


Toshiba is developing high-performance RF switch ICs using its in-house fab to apply SOI-CMOS technology, which is suitable for integrating analogue and digital circuits. By handling all aspects of the production flow, from RF process technology development to the design and manufacturing of RF switch chips, Toshiba can swiftly improve SOI-CMOS process technology in response to feedback from the development results of its own RF switch IC products. This integrated device manufacturer (IDM) approach allows Toshiba to quickly establish new process technologies suited to actual products and to enter the market with products fabricated with the latest process technology, the company stated.

SOI process TarfSOI for RF switches

Insertion loss characteristics of SOI process TarfSOI for RF switches

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