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ST debuts 1.5kV super-junction power MOSFETs

Posted: 27 Oct 2015     Print Version  Bookmark and Share

Keywords:STMicroelectronics  MOSFET  super-junction  power supplies  server 

STMicroelectronics has introduced a family of power MOSFETs that enables designers of power supplies to maximise the power efficiency of their products while improving robustness and safety margins. According to the company, the MDmeshTM K5 devices are the first in the world to combine super-junction technology with a drain-to-source breakdown voltage of 1.5kV.

The devices address the growing demand for higher output power for auxiliary switched-mode power supplies in servers, where power-supply robustness is a key factor in minimising down-time, and in industrial applications such as welding and factory automation. For these applications, where power output ranges from 75W to 230W or above, super-junction MOSFET technology is the preferred choice because of its outstanding dynamic-switching performance.

MDmeshTM K5

ST's MDmesh K5 Power MOSFET family takes this technology to a new level, with the lowest on-resistance (Rds(on)) per area and the lowest gate charge (Qg) in the market, resulting in the industry's best Figure of Merit (FoM), stated the company. The devices are geared for all popular power-supply topologies including standard, quasi-resonant and active-clamp flyback converters, and LLC2 half bridge converters for applications where high efficiency (up to 96 per cent) and output powers approaching 200W are required for a range of input voltages.

The first two members of the family are the STW12N150K5 and the STW21N150K5, which offer maximum drain-to-source currents of 7A and 14A, respectively, with gate charge as low as 47nC (STW12N150K5) or on-resistance as low as 0.9Ω (STW21N150K5). Both devices are offered in TO-247 packages in volume quantities at prices of $14 for 1,000 units.

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