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ams rolls truly voltage-scalable CMOS transistors

Posted: 29 Sep 2015     Print Version  Bookmark and Share

Keywords:ams  CMOS  transistor  MEMS  NMOS 

The full service foundry division of ams has expanded of its 0.35µm high-voltage CMOS specialty process platform. The advanced "H35" process now includes a set of truly voltage scalable transistors offering significant area and performance improvements, stated the company.

The voltage scalable high-voltage NMOS and PMOS transistor devices are optimised for various drain-source voltage levels (VDS) from 20V to 100V and provide significant lower on-resistance thus resulting in area savings. Using an optimised 30V NMOS transistor in power management applications instead of a fixed 50V transistor results in an area saving of about 50 per cent. A 60V optimised NMOS device results in 22 per cent less area when compared to a standard 120V NMOS transistor.

Foundry customers developing complex high-voltage analogue/mixed-signal applications such as large driver and switching ICs instantly benefit from more dies per wafer.

The area optimised devices are geared for a range of applications such as MEMS drivers, motor drivers, switches and power management ICs used in automotive, medical and industrial products.

This latest high-voltage process extension is an add-on to the company's "More Than Silicon" portfolio.

The complete set of voltage scalable transistors including device layout generator (PCells), simulation models, verification rule decks for Calibre and Assura as well as documentation such as design rules and process parameters documents can be downloaded by registered users from the company's secure foundry support server at http://asic.ams.com.





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