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RF/Microwave  

GaN power amplifiers support frequency bands up to 7.5GHz

Posted: 04 Sep 2015     Print Version  Bookmark and Share

Keywords:Pasternack  power amplifier  GaN  gallium nitride  RF 

Pasternack has extended its line-up of gallium nitride (GaN) coaxial power amplifiers. GaN has emerged as the technology of choice in power amplifier designs. The RF amplifiers include GaN-based models that feature very high gain levels from 43dB to 60dB across mostly broad frequency bands ranging from 30MHz to 7.5GHz. Saturated output power levels range from 10W to 100W with 20-35 per cent Power Added Efficiency (PAE), detailed the company.

The high power density of gallium nitride semiconductor technology dissipates heat more effectively, which results in amplifier designs that have significantly higher output power levels over broadband and narrowband frequencies. These rugged connectorised designs have the advantage of high output load impedance that offers easier impedance matching over wider bandwidths using lower loss components. Applications include commercial and military radar, jamming systems, medical imaging, communications and electronic warfare.

GaN power amplifiers

The thermal efficiency of GaN technology enables these assemblies to be integrated into smaller, more compact coaxial packages with the same level of high reliability.

All of the high power GaN amplifiers from Pasternack have single voltage supplies that are internally regulated. The 50Ω input/output matched designs are adaptable to a range of power and modulation requirements. These PAs also show impressive harmonic response (-15dBc to -20dBc) under worst case conditions. These GaN amplifiers are designed to withstand environmental conditions such as humidity, altitude, shock and vibration. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.

Pasternack's GaN power amplifiers are in-stock and ready to ship.





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