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UMC 28nm process gets IO pad library from Indian start-up

Posted: 16 Jul 2015     Print Version  Bookmark and Share

Keywords:IO pad  28nm  DDR  LVDS  memory card 

Krivi Semiconductor has made its IO pad library available for 28nm manufacturing process technology from United Microelectronics Corp. (UMC).

The Alcor IO pad library platform supports a wide variety of interface standards including DDR, LVDS, and memory card super combo IO libraries. All these IO libraries are proven in test silicon for their compliance to respective electrical standards, ESD and latch-up performance.

"With the addition of the IO Alcor platform from Krivi, our mutual customers now have access to a valuable resource that will allow them to seamlessly integrate a wide variety of high speed memory IO into their SoC design," said Shih-Chin Lin, senior director of UMC's IP & Design Support division.

Universal DDR IO pad library supports all popular DDR standards like DDR4, DDR3/3U/3L, LPDDR3, LPDDR2, HSTL class-I and RLDRAM-3 etc. This library works at a maximum speed of 2.667Gbit/s in HLP process technology and boasts of having industry's smallest foot-print. Additional area optimisation cells in the library allow engineers to build PHY with smaller widths that can potentially save up to 25 per cent area.

Data retention feature enables deep low power operation, allowing the core and most of the IO supply to power down during DRAM self-refresh conditions. Power ramping sequence is made independent with the help of a voltage sensing cell in the library. This library is designed with an aggressive power target of receiving data at 1mW/Gbps. Small idle mode static power consumption is achieved by fast wake-up support of receiver.

LVDS and SubLVDS combo IO library have data input and output cells along with an in-built Bandgap voltage reference cell for biasing. This IO pad meets TIA/EIA-644-A and SMIA 1.0 Part 2: CCP2 Sub- LVDSstandards while working at top speed of 2Gbit/s and 1.6Gbit/s respectively. Differential input IO pad operates at rail to rail common mode voltage with a resolution of as low input differential voltage as 50mV. Differential output IO pad allows higher speeds with better signal integrity due to an in-built near- end termination.

Memory card I/O pad supports interface signalling ranging from 1.2V to 3.3V while using 1.8V gate oxide IO devices. This bi-directional I/O pad supports eMMC and UHS-I SD card standards along with related similar standards. The library offers the end-user a choice of multiple drive strengths, slew rates and weak pull resistors.

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