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Silicon SPDT switch touts 0.6dB low insertion loss at 8GHz

Posted: 25 May 2015     Print Version  Bookmark and Share

Keywords:Analog Devices  RF switch  GaAs  ESD  wireless communication 

Analog Devices Inc. (ADI) has announced an absorptive single-pole, double-throw (SPDT) switch specified for the 9kHz to 13GHz frequency band. According to the company, the device features a high isolation of 48dB and low insertion-loss of 0.6dB at 8GHz.

The HMC1118LP3DE is the first offering within ADI's latest RF and microwave control product portfolio to exhibit the inherent advantages of silicon process technology, which offers critical advantages compared with legacy gallium-arsenide (GaAs) RF switches. The advantages include a settling time that is 100 times faster than GaAs, robust electrostatic discharge (ESD) protection (2kV vs. 250V compared to GaAs), and the ability to extend the switch's low frequency-end one thousand times lower than GaAs while maintaining high linearity.


The HMC1118LP3DE also offers industry-leading RF power handling of 4W in through and 0.5W in hot-switching operating modes, stated the company. Hot-switching power handling is more than twice better than competitive parts with similar RF bandwidth, which allows engineers to increase allowed RF power in their applications and systems without the risk of damage to the part. The HMC1118LP3DE is optimised for high-isolation and extremely flat transfer characteristics within a wide operating frequency range up to 13GHz, while maintaining high signal fidelity down to 9kHz.

The combination of features makes the switch suitable for demanding test and measurement, automated test equipment, defence electronics and wireless communication applications as a lower cost alternative to legacy GaAs switches, indicated ADI.

The HMC1118LP3DE in a 3mm x 3mm QFN SMT packaging is priced at $6.18 each per 1,000 devices.

- Paul Buckley
  EE Times Europe

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