Global Sources
EE Times-India
Stay in touch with EE Times India
EE Times-India > Power/Alternative Energy
Power/Alternative Energy  

IR reveals compact 25V dual N-channel power MOSFET

Posted: 05 Jan 2015     Print Version  Bookmark and Share

Keywords:International Rectifier  MOSFET  PQFN 

International Rectifier has unveiled a 25V dual N-channel power MOSFET housed in a 4 x 5mm PQFN power-block package. The IRFH4257D is intended for 12V input DC/DC synchronous buck applications such as telecom equipment, servers, graphic cards and computers.

With this latest power-block addition, designers now have the option of choosing a 4 x 5mm or 5 x 6mm PQFN to suit their design requirements.


The IRFH4257D offers low on-state resistance of less than 1.8mΩ and low gate charge of 9.7nC typical. Other specifications include a drain-to-source breakdown voltage of 25V minimum and a current rating of 25A. The device is qualified to industrial grade and moisture sensitivity level 1 and features an environmentally friendly, lead-free and RoHS-compliant BOM.

Prices for the IRFH4257D FastIRFET start at $0.99 in lots of 10,000 units. Production orders are available immediately.

Comment on "IR reveals compact 25V dual N-channe..."
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.


Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

Back to Top