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ON Semi, Transphorm develop GaN-based power solutions

Posted: 29 Sep 2014     Print Version  Bookmark and Share

Keywords:GaN  power 

ON Semiconductor Corp. and power conversion specialist Transform have forged a partnership for the development and commercialisation of gallium nitride (GaN)-based devices and power system solutions for a range of high-voltage applications in the industrial, computing, telecom and networking sectors.

For power applications, GaN has been shown to deliver significant performance advantages compared to silicon based devices. The new generations of packaged products currently being co-developed by ON Semiconductor and Transphorm will provide reliable, qualified solutions that claim to enable designers to achieve previously unobtainable levels of efficiency and power density.

This strategic partnership leverages strengths inherent in both companies. Transphorm boasts being the first company to bring to market production qualified 600V GaN on silicon transistors. ON Semiconductor, meanwhile, touts energy-efficient power solutions, significant expertise in system design, and an impressive portfolio that ranges from power discretes, high performance AC/DC controllers and integrated switchers to full custom ASIC power management solutions.

The first co-developed solutions based on 600V GaN transistors are expected to be available for sampling before the end of 2014. These solutions will address high power density applications in the 200W to 1kW power range for compact power supplies and adapters addressing the telecom and server markets.

Under the terms of the partnership, the co-developed packaged transistor products will include low-voltage MOSFET silicon from ON Semiconductor for the cascoded switch, and GaN high-voltage high-electron-mobility transistors (HEMT) from Transphorm. Packaging, assembly and test of the devices will be done at ON Semiconductor production facilities.

Power system reference designs will be provided to customers, enabling implementation of new solutions with GaN-based transistors and the high performance AC/DC controllers required to take full advantage of the technical benefits of GaN devices.

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