Global Sources
EE Times-India
Stay in touch with EE Times India
EE Times-India > Amplifiers/Converters

IR MOSFET fights power losses with 6x6 PQFN package

Posted: 13 Aug 2014     Print Version  Bookmark and Share

Keywords:MOSFET  DC-DC  dual power  IRFHE4250D 

International Rectifier has unveiled a 25V dual-power MOSFET that claims to reduce power losses by over five per cent at 25A compared to best-in-class conventional power block devices.

The IRFHE4250D is targeted at 12V input DC-DC synchronous buck applications including advanced telecom and netcom equipment, servers, graphic cards, desktop, Ultra book and notebook computers.

IR said the device features its latest-generation silicon and expands the power block packaging platform with a 6x6 PQFN package, which has an exposed top and slim profile for back-side mounting. The package also boasts excellent thermal performance, low on-state resistance (RDS(on)) and gate charge (Qg), delivering superior power density and lower switching losses to shrink PCB size and improve overall system efficiency.

As with all IR power block devices, the IRFHE4250D works with any controller or driver to offer design flexibility. The device is qualified to industrial grade and moisture sensitivity level 2 (MSL2), and available at $1.44 in 1,000-unit quantities.

image name

The IRFHE4250D functional diagram. Source: International Rectifier

Comment on "IR MOSFET fights power losses with 6..."
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.


Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

Back to Top