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Toshiba reveals latest 650V SiC Schottky barrier diodes

Posted: 03 Jun 2014     Print Version  Bookmark and Share

Keywords:Toshiba  silicon carbide  schottky barrier diode  SBD 

Toshiba Corp. is set to expand its portfolio of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the introduction of insulated TO-220F-2L package products. The four products extend the 6A, 8A, 10A and 12A line-up from the existing TO-220-2L package products.

650V silicon carbide SBD

SBDs are suited for applications including server power supplies and power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are 50 per cent more efficient, according to a Toshiba survey.

SiC power devices offer more stable operation than current silicon devices, even at high voltages and currents, as they significantly reduce heat dissipation during operation, the company added. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters.

SiC SBD specs

Mass production shipment of the devices has begun.





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