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Understand parallel configuration of H-bridges

Posted: 30 Apr 2014     Print Version  Bookmark and Share

Keywords:H-bridges  MC33932/MC34932  MOSFETs  BiCMOS  SMARTMOS 

Two or more H-bridges can be operated in parallel to increase the current handling capacity of the circuit. In this application note, paralleling of H-bridges has been exemplified using a dual H-bridge model MC33932/MC34932. However, paralleling of H-bridges is not an easy task, as any offset or mismatch between the two MOSFETs can cause one of them to hit the over-current/temperature limit before the other, forcing very high-current through one of the H-bridges in parallel configuration, which may initiate device shutdown.

The objective of this application note is to present a method to obtain twice the current from a dual H-bridge by paralleling the dual H-bridges located on the same die. This document also presents the various methods to calculate the junction temperature, to ensure the device operates within the thermal limits specified in the data sheet.

Freescale analogue ICs are manufactured using the SMARTMOS process, a combinational BiCMOS manufacturing flow that integrates precision analogue, power functions and dense CMOS logic together on a single cost-effective die.

View the PDF document for more information.

Originally published by Freescale Semiconductor at as "Parallel Configuration of H-Bridges".

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