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Quad data rate SRAM device supports up to 400Gb line card

Posted: 03 Apr 2014     Print Version  Bookmark and Share

Keywords:Cypress Semiconductor  line card  SRAM  memory 

Cypress Semiconductor has released what it says is the industry's first Quad Data Rate IV (QDR-IV) SRAM. According to the company, the 144Mb and 72Mb devices support a random transaction rate (RTR) of 2,132 million transactions per second (MT/s).

The number of fully random memory accesses per second is the critical memory performance metric for increased line card and switching rates. The bottleneck for reaching increased line card rates is the processing of look-up tables, statistics and state counters stored in memory, as well as scheduling functions.

Cypress QDR SRAM

Cypress' QDR-IV SRAM is capable of operating in burst-of-two or banked burst-of-two modes, which deliver the fastest clock speeds and highest RTR of all QDR SRAMs. The banked burst-of-two operating mode operates at a maximum frequency of 1,066MHz with an RTR of 2,132MT/s, while the standard burst-of-two operating mode can achieve a maximum frequency of 667MHz and an RTR of 1,334MT/s. Both of these operating modes represent a significant improvement over the previous generation of QDR SRAM (450MHz frequency, 900MT/s RTR), stated the company.

QDR-IV was developed in the QDR consortium, whose members jointly define SRAM standards to enable multiple sources and supply stability. The 144Mb CY7C41xxKV and 72Mb CY7C40xxKV QDR-IV SRAMs are shipping in production quantities, available in a 361-ball Flip Chip Ball Grid Array (FCBGA) package.

- Julien Happich
  EE Times Europe





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