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Infineon supercharges transistor with 700W output power

Posted: 25 Mar 2014     Print Version  Bookmark and Share

Keywords:transistor  Infineon  L band 

Infineon Technologies AG has released an addition to its family of RF power transistors, featuring what it claims is the industry's highest L band output power of 700W for radar systems operating in the 1200MHz to 1400MHz frequency range, such as in traffic control and weather observation applications.

The PTVA127002EV's high output power allows engineers the option to use fewer components, resulting in a reduced BOM. It exhibits low heat output and high ruggedness, with an ability to withstand 10:1 VSWR load mismatch.

 PTVA127002EV

Infineon's 700W RF power transistor features what it claims is the industry's highest L band output power available for radar systems operating in the 1200MHz to 1400MHz frequency range.

Based on the company's 50V LDMOS power transistor technology, which targets communications and high-power pulsed applications, the transistor is said to be capable of 55 per cent efficiency across the 1200MHz to 1400MHz band, with 16dB gain and low thermal resistance characteristics when measured with a 300µs 10 per cent duty cycle pulse.

The transistors come with an evaluation board, and are available for sampling.





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