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Agilent upgrades advanced design system software

Posted: 24 Feb 2014     Print Version  Bookmark and Share

Keywords:Agilent Technologies  design system software  module design  RFIC 

Agilent Technologies has rolled out what it describes as a powerful version of the Agilent EEsof EDA Advanced Design System software. According to the firm, the ADS 2014 is intended to dramatically improve design productivity and efficiency with the latest technologies and capabilities.

ADS 2014 provides users with the latest technologies and capabilities as well as continued enhancements for silicon RFIC, MMIC, RF PCB, and multi-technology RF module design. Key features include: automatic electromagnetic (EM) simulation setup and design partitioning, which automates the removal of SMD and IC active devices, and placement of ports, then reconnection of the design 10X+ faster and 20X+ fewer mouse clicks; physical layout-versus-schematic (LVS) with device recognition and an innovative module-level LVS that uncovers multi-technology wiring and pin-swap errors; and wireless verification test benches that provide circuit design verification solutions for the newest and most challenging multi-band, wide-bandwidth standards (LTE, LTE-A and 802.11ac) with a dramatically simplified user interface.

It also boasts an improved layout interconnect design and editing capabilities, including new power and ground planes with smoothing and thermal relief, new intelligent vias and interconnect routes; controlled impedance line designer for quickly and accurately optimizing stack-up and line geometry for multi-gigabit-per-second chip-to-chip links; and silicon RFIC schematic interoperability with Virtuoso for bi-directional schematic interoperability between ADS and Cadence Virtuoso.

In addition, the software offers ADS Board Link, the next-generation PCB integration solution for bi-directional transfer of layouts, schematics and libraries between ADS and enterprise PCB tools; and offers simulation support for Agilent's DynaFET model, an advanced neural network model for III-V FETs (GaAs and GaN), to accurately model the effects of trapping, de-trapping, and self-heating, in a single, global model, valid for all (active) applications, without the need for tuning.

ADS 2014 is expected to ship in the first calendar quarter of 2014.

- Jean-Pierre Joosting
  EE Times Europe





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