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Half-bridge gate driver boasts programmable dead time

Posted: 21 Jan 2014     Print Version  Bookmark and Share

Keywords:IXYS  gate driver  MOSFET  IGBT  transistor 

IXYS Integrated Circuits Division (ICD) Inc., a wholly owned subsidiary of IXYS Corp. has uncloaked the IX21844 half bridge gate driver IC. According to the company, the IX21844 is a high voltage IC that can drive discrete power MOSFETs and IGBTs that operate up to 600V. Both the high side and low side outputs feature integrated power DMOS transistors, each capable of sourcing 1.4A and sinking 1.8A of gate drive current, indicated the firm.

The IX21844's 700V absolute maximum rating provides additional margin for high voltage applications, the company stated. The device is manufactured on IXYS ICD's advanced HVIC Silicon on Insulator (SOI) process, making the IX21844 extremely robust and virtually immune to negative transients and high dV/dt noise.

The inputs are 3.3V and 5V logic compatible. Internal under voltage lockout circuitry for both the high side and low side outputs does not allow the IX21844 to turn-on the discrete power transistors until there is sufficient gate voltage. A programmable dead time can be set between 400ns and 5us to ensure that both the high-side and low-side power MOSFET or IGBT are not enabled at the same time. The output propagation delays are matched for use in high frequency applications.

The IX21844 can drive power discrete MOSFETs and IGBTs in half-bridge, full-bridge and 3-phase configurations. Typical applications include motor drives, high voltage inverters, uninterrupted power supplies (UPS) and DC/DC converters. The IX21844 complements IXYS ICD's extensive low side gate driver and optically isolated gate driver portfolios and the full range of IXYS power semiconductors.

This IX21844 is available in production quantities in 14-pin SOIC (IX21844N) and 14-lead DIP (IX21844G) packages.

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