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GaN devices forecast to push RF power market

Posted: 24 Sep 2013     Print Version  Bookmark and Share

Keywords:ABI Research  RF power market  GaN device  SATCOM  gallium nitride 

According to ABI Research, spending on microwave RF power semiconductors has benefited from the availability of gallium nitride (GaN) devices for 4-18GHz. Point-to-point communications, SATCOM, radars of all types and new industrial/medical applications will all gain from the introduction of the high-power GaN devices, noted the market research company.

"While gallium arsenide devices are presently the backbone of microwave RF power it is gallium nitride that will drive growth going forward," said research director Lance Wilson, ABI Research. "GaN can operate at much higher voltages and at power levels that were difficult or impossible to reach using GaAs."

In addition to the above mentioned application segments, microwave GaN is finally reaching the performance points that can start to seriously challenge travelling wave tube applications for new designs that have historically used the latter.

For more statistics and forecasts, click here.

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