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IR debuts RAD-Hard power MOSFETs

Posted: 20 Aug 2013     Print Version  Bookmark and Share

Keywords:International Rectifier  RAD-Hard  power MOSFET  IRHLNM87Y20SCS  Trench technology 

International Rectifier (IR) has launched what it describes as a pair of high performance R8 radiation hardened (RAD-Hard) power MOSFETs optimised for space grade point-of-load (POL) voltage regulator applications. The R8 logic level power MOSFETs use Trench technology to offer extremely low on-state resistance (RDS(on)) of 12mΩ (typical) and total gate charge (QG) of 18nC (typical), increasing efficiency performance by up to six per cent compared to existing solutions, the firm noted.

The IRHLNM87Y20SCS device has a BVDSS rating of 20V and a maximum drain current (ID) rating of 17A. The devices are available in IR's SMD 0.2 surface-mount style package, achieving a 50 per cent space saving compared to the existing SMD 0.5 package solution. The devices are also offered in a TO-39 package or in die form for microcircuit design solutions.

The products are fully characterized for radiation performance to 300Krads of TID and SEE with LET of 81MeV-cm2/mg with VGS rating of 12V. Depending on the intended design orbit and anticipated radiation environment, R8 RAD-Hard MOSFETs may be well suited for applications requiring a mission life of 15 years or more.

Pricing for the R8 MOSFETs begins at Rs.35,568.86 ($594) each for 250-unit quantity. Production orders are available immediately. Prices are subject to change.

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