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650V NPT IGBTs aimed at industrial apps

Posted: 20 Aug 2013     Print Version  Bookmark and Share

Keywords:Microsemi  non-punch through  IGBT  silicon carbide  solar inverter 

Microsemi Corp. has revealed its next-generation of 650V non-punch through (NPT) insulated bipolar gate transistors (IGBTs) available in 45A, 70A and 95A current ratings. According to the firm, the product family is intended for operation in harsh environments and for industrial products such as solar inverters, welders and switch mode power supplies.

The power devices claim to improve efficiency by delivering the industry's best loss performance—about eight per cent better than the closest competitor's IGBT. The NPT IGBTs also enable extremely high switching speeds of up to 150kHz, which are further improved when the transistors are paired with Microsemi's silicon carbide (SiC) free-wheeling diodes, indicated the company. The NPT IGBTs allow developers to reduce total system costs by replacing more costly 600V to 650V MOSFETs for lower speed applications up to 150kHz.

All of the devices in the family are based on Microsemi's Power MOS 8 technology and leverage a modern wafer thinning process. This enables a significant reduction in total switching losses and allows the devices to operate at incredibly fast switching frequencies compared to competitive solutions.

The NPT IGBTs are easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high current modules. The devices are also short circuit withstand time rated (SCWT), providing reliable operation in harsh industrial environments, added Microsemi.

The IGBT products are available in a variety packages including TO-247, T-MAX and modules.

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