Using 1GHz 12 dB gain wideband amplifier MMIC
Keywords:discrete HBT NXP Semiconductors SiGe:C BiCmos BFU768F
The BGA3012 performance information is available in the BGA3012 datasheet.
This application note describes the evaluation board schematic and layout requirements for using the BGA3012 as a CATV drop amplifier between 40MHz and 1003MHz. The BGA3012 is fabricated in the BiCMOS process and packaged in a lead-free 3-pin SOT89 package. The BGA3012 is surface-mounted on an evaluation board with element matching and DC decoupling circuitry. The amplifier MMIC comprises a two stage amplifier with internal bias network and operates over a frequency range of 5MHz to 1003MHz with a supply voltage between 5 V and 8 V.
View the PDF document for more information.
Originally published by NXP Semiconductors at www.nxp.com as "BGA3012—1GHz 12 dB gain wideband amplifier MMIC".
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