Fast turn ON/OFF 5-5.9GHz WiFi LNA with BFU768F

The BFU768F is a discrete HBT that is produced using NXP Semiconductors' 110GHz fT SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor.

The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows a steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved. The BFU768F is one of a series of transistors made in SiGe:C.

BFU710F, BFU730F and BFU790F are the other types. BFU710F is intended for ultra low current applications. The BFU768F and BFU790F are high current types and are intended for application where linearity is key.

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Originally published by NXP Semiconductors at www.nxp.com as "Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU768F".