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Using low noise fast turn ON/OFF 5-5.9GHz WiFi LNA

Posted: 18 Jul 2013     Print Version  Bookmark and Share

Keywords:BFU730F  WiFi  LNA  discrete HBT  BiCmos 

The circuit discussed in this application note is intended to demonstrate the performance of the BFU730F in a 5-5.9GHz LNA for e.g. 802.11a/b/g & 802.11n "MIMO" WiFi (WLAN) applications.

The BFU730F is a discrete HBT that is produced using NXP Semiconductors' advanced 110GHz fT SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows a steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved.

The BFU730F is one of a series of transistors made in SiGe:C.

BFU710F, BFU760F and BFU790F are the other types. BFU710F is intended for ultra low current applications. The BFU760F and BFU790F are high current types and are intended for application where linearity is key.

New 6th & 7th Generation Wideband transistors from NXP offer best RF noise figure / gain trade-off at 12GHz drawing lowest current which means best signal reception at low power, enabling products to be more sensitive in noisy environments and friendlier to the environment.

View the PDF document for more information.

Originally published by NXP Semiconductors at as "Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730F".

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