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Using single stage 5-6GHz WLAN LNA with BFU730F

Posted: 16 Jul 2013     Print Version  Bookmark and Share

Keywords:BFU730F  HBT  SiGe:C  BiCmos  NPN transistor 

The circuit shown in this application note is intended to demonstrate the performance of the BFU730 in a 5-6GHz LNA for e.g. 802.11 & 802.11n "MIMO" WLAN applications.

The BFU730F is a discrete HBT that is produced using NXP Semiconductors' advanced 110GHz fT SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved.

The BFU730F is one of a series of transistors made in SiGe:C.

BFU710F; BFU760 and BFU790 are the other types, BFU710 is intended for ultra low current applications. The BFU760F and BFU790F are high current types and are intended for application where linearity is key.

View the PDF document for more information.

Originally published by NXP Semiconductors at as "Single stage 5-6GHz WLAN LNA with BFU730F".

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