Global Sources
EE Times-India
Stay in touch with EE Times India
EE Times-India > Optoelectronics/Displays

New design simplifies LED manufacturing

Posted: 12 Jun 2013     Print Version  Bookmark and Share

Keywords:GaN  LED  LEIC  smart lighting  lighting systems 

Researchers from Rensselaer Polytechnic Institute have created an innovative design that may lead to the creation of next-generation LED technologies that can offer, lower manufacturing costs, higher efficiency, and features and applications that goes beyond illumination.

Current LED lighting systems composed of chips that are made from the semiconductor material gallium nitride (GaN). In order for the LED to function, many external components—such as inductors, capacitors, silicon interconnects, and wires—must be installed on or integrated into the chip. The large size of the chip, with all of these necessary components, complicates the design and performance of LED lighting products. Additionally, the process of assembling these complex LED lighting systems can be slow, manually intensive, and expensive.

Researchers from the Smart Lighting Engineering Research Centre at Rensselaer have successfully integrated an LED and a power transistor on the same GaN chip. In the study led by T. Paul Chow, professor in the Department of Electrical, Computer, and Systems Engineering (ECSE) at Rensselaer, the researchers sought to solve this challenge by developing a chip with components all made from GaN. This type of monolithically integrated chip simplifies LED device manufacturing, with fewer assembly steps and less required automation. Additionally, LED devices made with monolithically integrated chips will have fewer parts to malfunction, higher energy efficiency and cost effectiveness, and greater lighting design flexibility.

Chow and the research team grew a GaN LED structure directly on top of a GaN high-electron-mobility transistor (HEMT) structure. They used several basic techniques to interconnect the two regions, creating what they are calling the first monolithic integration of a HEMT and an LED on the same GaN-based chip. The device, grown on a sapphire substrate, demonstrated light output and light density comparable to standard GaN LED devices. Chow said the study is an important step towards the creation of a new class of optoelectronic device called a light emitting integrated circuit (LEIC).

integrated GaN LED

A cross-section of the new monolithically integrated GaN LED and HEMT.

1 • 2 Next Page Last Page

Comment on "New design simplifies LED manufactur..."
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.


Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

Back to Top