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Nitronex outs 48V GaN-on-Si power transistor

Posted: 11 Jun 2013     Print Version  Bookmark and Share

Keywords:Nitronex  power transistor  NPT2000  GaN-on-Silicon 

Nitronex has announced a line of products based on 48V GaN-on-Silicon process technology. The NPT2000 Series discrete HEMT devices support power levels of 12W, 25W, 50W and 100W, and are available in both plastic and ceramic packages. According to the company, the power transistors are aimed at defense and high volume commercial markets.

"These products provide higher gain, higher efficiency and wider bandwidths for defense and commercial applications," said Greg Baker, president and CEO at Nitronex. "We see many interesting opportunities with our core customer and market base with the 48V ceramic package offering, and even more opportunities with the lower-cost plastic package line. Our thermally-enhanced plastic package offering will allow us to be very price competitive in new commercial markets for GaN such as land mobile radio and small-cell base stations."

The family of products includes the NPT2010 and NPT2020 with 100W and 50W of output power respectively, in an AC360 ceramic package, the NPT2018 and NPT2019 housed in a 3 x 6 DFN plastic package with output powers of 12W and 25W, and the NPT2021 (50W) and NPT2022 (100W) in the industry-standard TO272 plastic package. Samples are available with full production scheduled for 3Q13.

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