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SanDisk new process tech stays at 19nm

Posted: 30 May 2013     Print Version  Bookmark and Share

Keywords:flash memory  1Ynm process technology 

SanDisk Corp. has started sampling flash memory products based on the company's 1Ynm process technology, will have the same minimum geometry as the company's 1X generation of 19nm.

Utilising the 1Ynm process technology shrinks memory cell size from 19nm-by-26nm to 19nm-by-19.5nm, delivering a 25 per cent reduction of the memory cell area, SanDisk said.

The memory company noted that its second-generation 19nm memory die uses a sophisticated flash memory technology, including advanced process innovations and cell-design solutions.

EE Time's Peter Clarke has commented that SanDisk's announcement of its 1Ynm process technology is surprising as flash memory has previously been forecast to have three nodes at between 19nm and 10nm starting at 1X and going to 1Z. If the progress followed Moore's Law of diminishing minimum geometries to provide denser 2D memory arrays it would give 1Y node at about 15nm followed by a smallest possible flash memory at about 11- or 10nm, Clarke said.

Clarke observed that one possibility why SanDisk has chosen to stay at 19nm is to avoid the need to go to quadruple patterning of immersion optical lithography, which would have a significant impact on the cost of production of NAND flash memory.

SanDisk's All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. The company added that its 3bits per cell X3 technology, implemented in the second-generation 19nm node will deliver the lowest-cost flash solutions to address multiple growing end-markets for flash memory.

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