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Xilinx, Sumitomo partner to cut wireless networking costs

Posted: 24 May 2013     Print Version  Bookmark and Share

Keywords:GaN  power amplifier  transistor  wireless networking  SmartCORE IP 

A partnership between Xilinx Inc. and Sumitomo Electric Industries Ltd is aiming to bring smarter solutions to market that will cut capital expenditures and operational expenditures. Using Sumitomo's Gallium Nitride (GaN) power amplifier transistors and Xilinx's SmartCORE IP that result in higher radio unit efficiencies, wireless system designers can scale to support small cells to high-end macro cells, as well as active antenna systems (AAS). The resulting devices according to the companies, will give customers time-to-market advantages, lower development costs, high efficiency, lower SWaP (size, weight and power), and lower total cost.

Xilinx radio SmartCORE IP such as Digital Up and Down Converters (DUC/DDC), Crest Factor Reduction (CFR) and Digital Pre-Distortion (DPD) IP cores, coupled with generation-ahead 28nm Zynq-7000 All Programmable SoCs, offers customers a single-chip implementation of the entire digital radio in addition to board level control and calibration typically found in an external processor.

"By collaborating with Sumitomo Electric, we are able to provide our customers with a smarter solution that is scalable to support the needs of broadband microcells, and up to the highest performance multi-antenna broadband macros and AAS installations," said David Hawke, director of wireless product marketing at Xilinx. "Additionally, our radio IP, coupled with Sumitomo Electric's power amplifier transistors, allow OEMs to design equipment that ultimately save operator CapEx and OpEx, as well as reduce device cost and power."

"Sumitomo Electric's GaN-based power devices combined with Xilinx's SmartCORE IP will demonstrate the world's next generation of highly efficient solutions for the wireless market," said Nobu Kuwata, general manager of technology and marketing strategy department at Sumitomo Electric Device Innovations, Inc. "Sumitomo Electric is committed to developing the products necessary to meet the requirements of our customers offering smarter solutions."

The high breakdown voltage and saturation velocity characteristics of GaN devices make it an ideal candidate for high-power and high-temperature base station applications. The higher power density of GaN also allows for smaller devices, reducing size and cost.





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