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SiC power modules claim high thermal conductivity

Posted: 18 Jan 2013     Print Version  Bookmark and Share

Keywords:silicon carbide  SiC  power  modules 

Microsemi Corp. unveils silicon carbide (SiC) standard power modules designed for high power, high voltage industrial applications such as switch mode power supplies, motor drives, uninterruptible power supplies, solar inverters, and oil exploration, among other demanding environments.

The power module family is also offered with extended temperature ranges to meet next-generation power conversion system requirements for higher power densities, operating frequencies and efficiencies.

SiC technology delivers higher breakdown field strength and improved thermal conductivity compared to silicon material. This enables improved performance characteristics in parameters including zero reverse recovery, temperature independent behaviour, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability.

Microsemi's new industrial temperature SiC power modules feature multiple circuit topologies and are integrated into low profile packages. The majority of the new module product family uses aluminium nitride (AIN) substrates to enable isolation from the heat sink, which improves heat transfer to the cooling system.

Additional features include high speed switching, low switching losses, low input capacitance, low drive requirements, low profile and minimum parasitic inductance which enable high frequency, high performance, high density and energy-saving power systems.

The new industrial temperature module family includes the following parameters and devices:
• 1,200V boost chopper configuration, rated from 50A to 100A (Part numbers: APT100MC120JCU2 and APT50MC120JCU2).
• 1,200V phase leg configuration, rated from 40A to 200A (Part numbers: APTMC120AM08CD3AG, APTMC120AM20CT1AG, and APTMC120AM55CT1AG).
• 600V neutral point clamped configuration, dedicated to three level inverters for solar or UPS applications, rated from 20 to 160A (Part numbers: APTMC60TLM14CAG, APTMC60TLM20CT3AG, APTMC60TLM55CT3AG, and APTMC60TL11CT3AG).
• Neutral point clamped configuration, 600V/1200V mixed voltage, rated from 20 to 50A (Part numbers: APTMC120HRM40CT3G and APTMC120HR11CT3G).

Microsemi's SiC product portfolio includes Schottky diodes in both discrete and module packages, and power modules with a mix of SiC Schottky diodes and IGBT or MOSFET transistors in both standard and custom configurations.

Samples of Microsemi's industrial temperature, SiC standard power modules are available within short lead times.

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