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Imec, Synopsys work on TCAD models for 10nm FinFET

Posted: 13 Dec 2012     Print Version  Bookmark and Share

Keywords:tcad  finfet  tunnel fet 

Imec and Synopsys Inc. have extended their collaboration in the field of Technology Computer Aided Design (TCAD) to next-generation FinFET technology at 10nm.

The collaboration builds on extensive work done at 14nm and several other process geometries, and will calibrate Synopsys' Sentaurus TCAD models to support the next-generation FinFET devices. The collaboration will include 3-D modelling of new device architectures and materials that will enable the semiconductor industry to continue to deliver products with higher performance and lower power consumption.

"Our focus is to address semiconductor device and material challenges at 10nm and beyond," said Aaron Thean, director of the logic programme at Imec.

Imec is partnering with leading IC companies for research in advanced CMOS scaling. Device scaling beyond feature-size reduction requires research on a range of new technologies, including new materials, device architectures, 3-D integration, and photonics. The collaboration between Imec and Synopsys specifically focuses on the development and optimisation of new device architectures based on FinFETs and tunnel FETs (TFETs). At the IEDM 2012, Imec presented a paper on the use of stressors to boost carrier mobility, which is critical to scale FinFET devices at 10nm and beyond. Insights and understanding obtained through the usage of Synopsys' TCAD tools will allow Imec to accelerate this research.

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