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LDMOS power ICs connect wireless base stations

Posted: 02 Nov 2012     Print Version  Bookmark and Share

Keywords:LDMOS  laterally diffused metal oxide semiconductor  power  transistors  wireless 

NXP Semiconductors NV launches a new family of laterally diffused metal oxide semiconductor (LDMOS) RF power transistors. The devices are designed for small cell wireless base stations such as 1W-2W picocells and 8W-12W microcells.

 BLM7G22S-60PB

They span frequency ranges from 700MHz to 2.7GHz and include the world's first asymmetric monolithic microwave ICs (MMICs), as well as low-cost, low-power plastic devices. They claim to deliver a balance of energy efficiency and integration.

The new products include asymmetric and symmetric MMICs for dual-stage microcells. The asymmetric MMICs are said to provide more power efficiency at back-off and offer increased flexibility, particularly in Doherty configurations in microcells and antenna arrays. The first MMIC is based on the company's LDMOS technology. Qualification samples of the BLM7G22S-60PB(G) are now available, together with 7 new product types. MMICs are dual path with two separate amplifiers, each with 30dB gain and a certain power rating of P1dB. Suitable for dual-stage micro base stations where high integration is a priority, NXP's family of symmetric and asymmetric MMICs offer a modular approach, allowing different power levels on each path, as well as better isolation between the two paths for better Doherty performance and stability.

The LDMOS power transistors for single-stage, high-performance microcells are single- and dual-path devices in different bands, including the BLF6G22LS-40P and the BLF6G27LS-40P, which are currently in volume production. Additional products, including the BLP7G10S-45P, the BLP7G22S-60P and the BLF8G27LS-50A are currently in development.

For picocells, the low-power 10W BLP7G22-10 is available with 17dB gain at 2GHz. The 7.5W BLP7G27-07 provides 15.3dB gain at 2.6GHz, for final-stage picocell applications in a variety of configurations from Class A to Doherty. Also, NXP's low-power plastic LDMOS transistors offer high performance at 12V with a peak power of 4W. Further, as pre-drivers or drivers in both micro and macro base stations, they can serve as low-cost alternatives to the ceramic BLF6G21-10G and BLF6G27-10G, which are in mass production. NXP is also developing two MMICs for this power class.





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