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FRAM tips 1012 times read/write cycle capability

Posted: 30 Oct 2012     Print Version  Bookmark and Share

Keywords:FRAM  ferroelectric RAM  memory  non-volatile memory 

Fujitsu Semiconductor America unveils the MB85RC256V ferroelectric RAM (FRAM) device. The non-volatile data memory operates from 2.7V to 5.5V, and is said to provide high-speed read/write access times and low power consumption for products that require a wide voltage range.

The MB85RC256V offers 256Kb memory capacity with configurations of 32k x 8 bits, 1012 times read/write cycle capability, and 10 years of data retention at industrial temperature ranges. It supports I2C with frequencies up to 1MHz when operating between 4.5V and 5.5V and frequencies of 400kHz when operating between 2.7V and 4.5V.

FRAMs combine the non-volatile data memory characteristics of ROM with the speed advantages of RAM. They claim to deliver faster read/write access, higher endurance and lower power consumption than conventional EEPROM and Flash memory. These features make FRAM suitable for applications such as metering, industrial control, medical and healthcare electronics, and financial point-of-sale systems.

The MB85RC256V FRAM is available now 3.9mm x 5.05mm or 5.3mm x 5.24mm SOP-8 packages. These two package options are pin-compatible with other memory devices, making it easy to replace existing sockets.

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