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LSA tools tout two lasers

Posted: 26 Oct 2012     Print Version  Bookmark and Share

Keywords:laser spike anneal  LSA  dual-beam  laser annealing systems  processing 

Ultratech Inc. announces the LSA101LP and LSA101HP laser spike anneal (LSA) products featuring dual-beam laser technology, that are said to expand processing capabilities compared to conventional millisecond annealing tools. The two tools are based on the company's LSA101 platform for 40nm and 28nm logic devices.

The LSA101LP has a second low-power laser beam that enables low-temperature processing required for middle-of-line applications. In the LSA101 system, a single CO2 laser beam is used to heat the wafer surface from a substrate temperature of approximately 400�C to the peak annealing temperature in the range 1,100�C to 1,350�C. In the LSA101LP system, the low-power laser preheats the wafer, enabling lower substrate temperatures required for MOL processes, such as nickel silicide formation. Also, a new temperature measurement and control system has been developed to enable the lower peak temperatures required for these processes. For leading-edge logic nodes, the short time scale of millisecond annealing has been shown to minimise nickel silicide diffusion and leakage-related yield loss. For MOL applications, the maximum throughput of the system is an industry-leading 70wph.

Compared to competing laser annealing systems, the LSA101LP offers superior within-die uniformity for different layouts due to its long-wavelength source, industry-leading process control due to its full-wafer closed loop temperature control, and a significantly lower cost of ownership due to higher throughput and low cost of consumables.

The LSA101HP has a second high-power laser that enables longer dwell times required for some advanced front-end-of–line applications. For the LSA101 system, the primary CO2 beam is relatively narrow so that it generates dwell times on the order of 100s of microseconds. In the LSA101HP system, the second high-power laser creates a longer dwell time anneal on the order of 10msec. The combination of these two lasers leads to a unique temperature profile, which is comprised of a long dwell and short dwell anneal in a single process. There are numerous applications that can benefit from this kind of temperature profile, such as annealing end-of-range implant damage with minimal dopant diffusion. This application has the potential of replacing conventional rapid thermal processing (RTP) for junction activation in advanced logic nodes, where small devices cannot tolerate the dopant diffusion caused by the longer annealing times of RTP.

Several LSA101LP systems have already been delivered to logic foundries, and inserted into 20nm baseline processes, while the LSA101HP is scheduled to be delivered to several logic foundries in 1H 13. Both dual-beam systems are field upgradable on the LSA101 platform.

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