Global Sources
EE Times-India
Stay in touch with EE Times India
 
EE Times-India > Power/Alternative Energy
 
 
Power/Alternative Energy  

IGBTs tip efficiency for soft switching apps

Posted: 25 Oct 2012     Print Version  Bookmark and Share

Keywords:reverse conducting  IGBT  soft switching 

Infineon Technologies grows its third generation Reverse Conducting Soft Switching IGBT portfolio with the rollout of 1,200V and 1,350V devices in 30A and 40A that are suited for induction cooking, solar and other resonant switching applications.

The IGBTs cut switching losses by more than 20 per cent, resulting in a 5K case temperature reduction during application tests in comparison to company's previous generation devices. Lower switching losses mean less thermal stress on the device, thus, longer lifetime and higher reliability.

The portfolio extension of 30A and 40A in 1,350V addresses the need for devices with higher breakthrough voltage and current withstand capabilities, which allow for the development of higher power rated designs in single-end topologies, for example up to 3.6kW.

Additionally, the 30A and 40A devices with 1,350V breakthrough voltage enable the extension of the safe operating area and higher over-current rating during surge conditions, which gives designers enhanced robustness and reliability.

The comprehensive product portfolio in 15/20/30/40A in 1,200V and 1,350V allows designers to choose the IGBT with the best-in-class efficiency and optimal features for their specific application. Flexibility of design in combination with the highest performance streamlines the development process and leads to shorter development time.

All the third generation Reverse Conducting IGBT are designed to operate with junction temperatures up to 175°C. Saturation voltage VCE(sat) value ranges from 1.8V to 2.1V for a 15A 1,200V device and 40A with a 1,350V device respectively at Tj=175°C. Low turn-off soft switching losses ensure highly efficient operation from 0.15mJ with 15A 1200V IGBT to 1.07mJ for a 40A 1350V device at dv/dt=150.0V/µs and Tj=175°C.

The third generation Reverse Conducting IGBT portfolio is available in 15A, 20A, 30A and 40A current class with 1,200V and 1,350V breakthrough voltages, as well as 1,100V in 30A current class.

Devices are available immediately in high production volumes.





Comment on "IGBTs tip efficiency for soft switch..."
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
 
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

 

Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

 
Back to Top