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Embedded EEPROM cuts SNR in smartphones

Posted: 10 Sep 2012     Print Version  Bookmark and Share

Keywords:embedded  EEPROM  touch sensing 

MagnaChip Semiconductor Corp. announces a high voltage option for its 0.18µm embedded EEPROM technology that improves signal-to-noise ratio (SNR), thus increasing noise immunity, in touch sensing applications.

The new 0.18µm embedded EEPROM process uses high-voltage capacitors and 20V transistors. This is achieved without compromising the existing 0.18um EEPROM and logic characteristics that make the process suitable for touch sensing IC applications.

As smartphones and tablets become thinner, their electronic circuitry becomes more susceptible to internal and external electrical noise. Sources of noise, particularly in mobile devices, include the close proximity of the various semiconductor components within the system, battery chargers and even external factors such as temperature and humidity. Unwanted electrical noise can generate spurious signals creating false touches in the sensing circuitry. MagnaChip's process technology enhances the functionality and performance of these IC designs by improving SNR characteristics. The company is planning to develop a 30V process for larger screen mobile applications.

Delivery of the 20V technology is targeted for 2013.





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