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Power/Alternative Energy  

20V MOSFETs boost charging, load switching

Posted: 17 Aug 2012     Print Version  Bookmark and Share

Keywords:p-channel  power  trench  MOSFETs 

Fairchild Semiconductor unveils the FDMA910PZ and FDME910PZT p-channel PowerTrench MOSFETs designed for switching and linear mode applications in cellular handsets and other portable applications for which they improve battery charging and load switching.

Available with a 20V rating, the devices offer low on-state resistance. To prevent ESD failures, the FDMA910PZ and FDME910PZT are equipped with optimised Zener diode protection, which also reduces IGSS leakage maximum rating from 10µA to 1µA.

The FDMA910PZ has a low profile of 0.8mm maximum in the MicroFET 2mm x 2mm package with HBM ESD protection level > 2.8kV typical. It offers Max Rds(on) = 20mΩ at VGS = -4.5V, ID = -9.4A; Max Rds(on) = 24mΩ at VGS = -2.5V, ID = -8.6A; and Max Rds(on) = 34mΩ at VGS = -1.8V, ID = -7.2A.

The FDME910PZT has an even lower profile of 0.55mm maximum in the MicroFET 1.6mm x 1.6mm thin package with HBM ESD protection level > 2kV typical. It offers Max Rds(on) = 24mΩ at VGS = -4.5V, ID = -8A; Max Rds(on) = 31mΩ at VGS = -2.5V, ID = -7A; and Max Rds(on) = 45mΩ at VGS = -1.8V, ID = -6A.

The FDMA910PZ and FDME910PZT are free from halogenated compounds and antimony oxides and are RoHS-compliant. Both devices provide safe operation at low-voltage and are suitable for use in handsets and portable devices.

The FDMA910PZ and FDME910PZT are priced at Rs.19.67 ($0.36) and Rs.18.03 ($0.33), respectively, in 1,000 quantity orders. Samples are available upon request. Delivery is 8-12 weeks ARO.





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