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TEL NEXX, IBM collaborate on 3D semiconductor packaging

Posted: 10 Jul 2012     Print Version  Bookmark and Share

Keywords:3D semiconductor packaging  physical vapor deposition  Stratus ECD  silicon interposers  interconnects 

TEL NEXX, a subsidiary of Tokyo Electron U.S. Holdings, has announced a new multi-year joint development programme with IBM in 3D semiconductor packaging.

The programme focuses on meeting IBM's technology requirements through its partners in the Semiconductor Research and Development Alliance.

Under the agreement, TEL NEXX will contribute its advanced production tools to the venture, including the Apollo for physical vapor deposition (PVD), the Stratus for electrochemical deposition (ECD), among others, to study both complex substrates and tool design.

TEL NEXX is already working closely with IBM R&D in developing new concepts for silicon interposers, lead-free bumping, microbumps, and other metal layer deposition for interconnects.

"Enhanced Apollo PVD technology promises an economically efficient solution for barrier seed deposition. Stratus ECD will be deployed in developing plating interconnects, among other 3D structures. We're aiming to meet levels of productivity and reliability that solve problems only now being formulated in IBM's advanced labs," said Tom Walsh, TEL NEXX president.

IBM's next generation server products are challenged to demonstrate trouble-free lifetimes of up to twenty years. Meeting that goal requires a near-perfect processing environment provided by the PVD and ECD production tools, the company said.





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