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NXP's LDMOS RF power transistor improves gain by 1dB

Posted: 15 Jun 2012     Print Version  Bookmark and Share

Keywords:RF  power transistor  LDMOS 

NXP Semiconductors N.V. expanded its eighth-generation (Gen8) LDMOS RF power transistor portfolio for wireless base stations providing enhanced linearized efficiency, gain and wideband capability.


Covering all main cellular frequency bands between 700 to 2700MHz, NXP's latest LDMOS process is said to increase the efficiency of Doherty amplifiers by as much as three points and improve gain by as much as 1dB. The Gen8 LDMOS RF power transistors offer up to 115MHz of signal bandwidth to enable full-band operation for all cellular frequency bands, including GSM, W-CDMA and LTE, as well as unprecedented video bandwidth up to 300MHz, said the company.

Designed for cost-sensitive applications, the Gen8 LDMOS transistors offer P1dB powers up to 270W in SOT502-sized packages, and 400W in SOT539-sized packages. The breakthrough power density of NXP's Gen8 LDMOS transistors helps to reduce the size and weight of Doherty amplifiers—and ultimately the base station cabinet—significantly, noted the company. Combined together, these enhancements also reduce total expenditures related to cooling and operation. Engineering samples of 17 product types are now available. NXP will showcase its latest Gen8 LDMOS transistors at next week's MTT-S International Microwave Symposium 2012 in Montreal, Canada (booth 607).

According to NXP, the Gen8 transistors achieve excellent product consistency through a design that uses less sensitive matching topologies, and places resonance frequencies of the matching networks outside the band to limit the impact of manufacturing variations on performance. During manufacturing, the production line is calibrated on resonance frequency before the start of each batch. During testing, binning (gain and phase) is possible for sensitive Doherty designs, with several options available to increase correlation with the application, including Doherty testing for asymmetric transistors.

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