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A*STAR, NXP to develop 8" GaN-on-Si power devices

Posted: 25 May 2012     Print Version  Bookmark and Share

Keywords:GaN-on-Si  200mm  metal organic chemical vapour deposition  wafer 

A*STAR Institute of Microelectronics (IME) and NXP Semiconductors have entered into research collaboration to develop a 200mm gallium nitride-on-silicon (GaN-on-Si) process and technology for high voltage power devices to deliver highly-efficient energy solutions in end applications such as computing and communications, aerospace and automotive applications.

The team will develop process technologies for the manufacturing of GaN devices on 200mm wafer, which is expected "to bring about considerable reduction in manufacturing cost compared to using smaller size wafers."

The work will be carried out in IME's 200mm engineering fab which offers GaN metal organic chemical vapour deposition (MOCVD) capabilities for the production of GaN wafers.

"IME's GaN-on-Si research programme can play a vital role in helping our partners achieve commercial success in GaN power electronics," said Dim-Lee Kwong, professor, IME.

GaN-on-Si offers the key advantages of combining high operation voltage, high switching speed, low loss, and high integration level, on large diameter Si wafers. The CMOS-compatible device process that leverages the economics of scale and compatibility with high throughput and high capacity 200mm Si based wafer process technology offers significant opportunity for cost-efficient volume production.

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