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Photodiodes boast high radiant sensitivity

Posted: 28 Feb 2012     Print Version  Bookmark and Share

Keywords:photodiodes  photo interrupter  position sensor 

Vishay Intertechnology Inc. introduces the TEFD4300 and TEFD4300F, high-speed silicon PIN photodiodes boasting high radiant sensitivity and fast switching times optimised for data transmission, photo interrupters, optical switches, encoders, and position sensors in metering applications.

Vishay silicon PIN photodiodes

Vishay's silicon PIN photodiodes offer fast switching times down to 10ns at low load resistor values.

Offering 3mm lenses, in clear- and black-epoxy T1 plastic packages, the devices feature a high reverse photo current of 17µA and a 20° angle of half sensitivity.

For infrared and visible light sources, the TEFD4300 is a clear epoxy device with a sensitivity range of 350nm to 1120nm. For light sources in the infrared wavelength range of 770nm to 1070nm, the TEFD4300F is a black epoxy device with a daylight blocking filter matched with 850nm to 950nm IR emitters.

The photodiodes offer fast switching times down to 10ns at low load resistor values, a low 0.1 per cent/K temperature coefficient of light current, temperature range of -40°C to +100°C, and a 950nm wavelength of peak sensitivity. The devices are package matched with the VSLB3940, TSUS4300, and TSAL4400 IR emitter series. The photo detectors support lead (Pb)-free processing in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC, and conform to Vishay "Green" environmental specifications.

Samples and production quantities of the TEFD4300 and TEFD4300F are available now, with lead times of four to six weeks for larger orders.

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