Global Sources
EE Times-India
Stay in touch with EE Times India
EE Times-India > Power/Alternative Energy
Power/Alternative Energy  

Power MOSFETs claim low on-resistance

Posted: 16 Feb 2012     Print Version  Bookmark and Share

Keywords:power mosfet  trenchfet  p-channel 

Vishay Intertechnology Inc. releases two p-channel 30V devices to add to its MICRO FOOT TrenchFET Gen III power MOSFET family.

 TrenchFET power MOSFETs

Vishay's 30V TrenchFET power MOSFETs boast tiny size and low on-resistance.

The Si8497DB is claimed to be the industry's first 30V chipscale MOSFET in the compact 1mm x 1.5mm size, making it the smallest such device on the market, while the Si8487DB provides the lowest on-resistance available for a 30V chipscale device in the 1.6mm x 1.6mm form factor.

Vishay's TrenchFET Gen III p-channel technology uses advanced process techniques to pack one billion transistor cells into each square inch of silicon. This technology allows a superfine, subµm pitch process that cuts the industry's best on-resistance for a p-channel MOSFET by up to half. Chipscale MICRO FOOT technology allows the use of a larger die for a given outline, which means a lower on-resistance for a given device area, in addition to space savings to enable smaller, slimmer end products.

The Si8497DB and Si8487DB will be used for load, battery, and charger switching in handheld devices including smart phones, tablets, point-of-sale (POS) devices, and mobile computing. In laptop battery management circuits, the MOSFETs' low on-resistance translates into lower voltage drops across the load switch, which in turn reduces the occurrence of problem under-voltage lockouts. In charger applications for tablet PCs, smart phones, and POS devices, the low on-resistance means that higher charge currents can be used, facilitating faster battery charging.

For designers, the Si8487DB and Si8497DB provide a choice between size and on-resistance to meet the needs of their specific application. Where space is at a premium, the 1.5mm x 1mm Si8497DB combines a slim 0.59mm maximum height with low on-resistance of 53mΩ at 4.5V, 71mΩ at 2.5V, and 120mΩ at 2V. In applications where low on-resistance is essential, the Si8487DB offers on-resistance of 31mΩ at 10V, 35mΩ at 4.5V, and 45mΩ at 2.5V, and a 0.6mm maximum height, the industry's lowest on-resistance values for such a p-channel power MOSFET.

The devices are halogen-free in accordance with the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. The Si8487DB is pin compatible with Vishay's 30V Si8409DB.

Samples and production quantities of the Si8487DB and Si8497DB TrenchFET power MOSFET are available now, with lead times of 12 weeks for larger orders.

Comment on "Power MOSFETs claim low on-resistanc..."
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.


Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

Back to Top