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1.2kV MOSFET aims at energy-efficient switching

Posted: 24 Jan 2012     Print Version  Bookmark and Share

Keywords:MOSFET  SiC FET  power conversion application 

Alpha and Omega Semiconductor Ltd (AOS) and SemiSouth Laboratories Inc. unveil the UniSiC MOSFET, a 1.2kV, 90mΩ MOSFET in a TO262 package offering energy efficient switching targeted at high performance power conversion applications in the alternative energy, industrial and consumer segments.


The 1.2kV, 90mΩ MOSFET comes in a TO262 package.

The device offers unmatched low Rdson and gate charge Qg, a body diode with virtually no stored charge and a low diode forward voltage drop, described the companies. The device may be used similar to a conventional MOSFET or IGBT, with standard gate drives and is engineered so it can be switched over a wide speed range—as fast as a Superjunction MOSFET, or as slow as an IGBT, according to the companies.


The device has far superior characteristics compared to existing IGBTs or silicon power MOSFETs, claimed the companies. The small die size of the products shows the potential of the device for future miniaturisation of power circuits factoring in its capability to cut conduction and switching losses, they added.

The UniSiC device is formed by stacking specially designed low voltage silicon MOSFET atop a normally-on SiC JFET. The device is intended to provide great ease of use, working with standard drive circuitry and drastically improve circuit efficiencies across the whole range of load current, noted AOS and SemiSouth.

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