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IBM, Micron to produce 3D memory chips

Posted: 05 Dec 2011     Print Version  Bookmark and Share

Keywords:3D memory chips  CMOS  hybrid memory 

IBM and Micron Technology announced that Micron will begin production of new hybrid memory cube (HMC) device built using the first commercial CMOS manufacturing technology to employ through-silicon vias (TSVs)—IBM's 3D chip-making process.

The TSV process will be used in Micron's Hybrid Memory Cube. "IBM's advanced TSV chip-making process enables Micron's HMC to achieve speeds 15 times faster than today's technology."

HMC parts will be manufactured at IBM's chip fab in East Fishkill, N.Y, using the company's 32nm, high-K metal gate process technology.

The hybrid memory cube technology uses advanced TSVs—vertical conduits that electrically connect a stack of individual chips—to combine high-performance logic with Micron's DRAM. HMC prototypes, for example, clock in with bandwidth of 128 gigabytes per second (GB/s). By comparison, current state-of-the-art devices deliver 12.8 GB/s. HMC also requires 70 per cent less energy to transfer data while offering a small form factor—just 10 per cent of the footprint of conventional memory.

IBM.

IBM new 3D manufacturing technology will be the foundation for commercial production of the new memory cube.

"HMC is a game changer, finally giving architects a flexible memory solution that scales bandwidth while addressing power efficiency," said Robert Feurle, vice president, DRAM marketing, Micron. "Through collaboration with IBM, Micron will provide the industry's most capable memory offering."

HMC will enable a new generation of performance in applications ranging from large-scale networking and high-performance computing, to industrial automation and, eventually, consumer products.

"This is a milestone in the industry move to 3D semiconductor manufacturing," said Subu Iyer, IBM Fellow. "The manufacturing process we are rolling out will have applications beyond memory, enabling other industry segments as well. In the next few years, 3D chip technology will make its way into consumer products, and we can expect to see drastic improvements in battery life and functionality of devices."

IBM will present the details of its TSV manufacturing breakthrough at the IEEE International Electron Devices Meeting on December 5 in Washington, DC.





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