Global Sources
EE Times-India
Stay in touch with EE Times India
 
EE Times-India > RF/Microwave
 
 
RF/Microwave  

1.5GHz Doherty power amplifier for base station apps using BLF6G15L-250PBRN

Posted: 13 Jul 2011     Print Version  Bookmark and Share

Keywords:LDMOS  power transistors  amplifier  base stations applications 

Read about the design and performance of a power amplifier for 1.5GHz 3GPP E-UTRA LTE base stations using two BLF6G15L-250PBRN LDMOS power transistors in Doherty architecture.

This application note describes the design and performance of a Doherty power amplifier optimised for use in 1.5GHz 3GPP E-UTRA LTE base stations applications. The amplifier design, characteristics and the test methods used to determine the RF performance are also described.

The amplifier uses two BLF6G15L-250PBRN LDMOS power transistors in a Doherty architecture. The design ensures high efficiency while providing a peak power capability very similar to two parallel Class AB amplifiers. The input and output sections are internally matched, giving high gain with good gain flatness and phase linearity over a wide frequency band.

The BLF6G15L-250PBRN transistor is a sixth generation device using NXP Semiconductors' LDMOS process.

View the PDF document for more information.





Comment on "1.5GHz Doherty power amplifier for b..."
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
 
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

 

Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

 
Back to Top