Global Sources
EE Times-India
Stay in touch with EE Times India
EE Times-India > Controls/MCUs

100V gate driver designed for GaN FETs

Posted: 24 Jun 2011     Print Version  Bookmark and Share

Keywords:gate driver  field effect transistors  mosfet 

National Semiconductor Corp. releases the LM5113, a 100V, half-bridge, high-side and low-side GaN FET driver optimised for use in high-voltage power converters while offering reduced component count by 75 per cent and PCB area by up to 85 per cent compared to discrete driver designs.

Designers of power bricks and communications infrastructure equipment require high power efficiency in the smallest form factor. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National's LM5113 driver integrated circuit (IC) eliminates these challenges, enabling power designers to realise the benefits of GaN FETs in a variety of popular power topologies.

National's LM5113 is a 100V bridge driver for enhancement-mode GaN FETs. Using proprietary technology, the device regulates the high side floating bootstrap capacitor voltage at approximately 5.25V to optimally drive enhancement-mode GaN power FETs without exceeding the maximum gate-source voltage rating. The LM5113 also features independent sink and source outputs for flexibility of the turn-on strength with respect to the turn-off strength. A low impedance pull down path of 0.5Ω provides a fast, reliable turn-off mechanism for the low threshold voltage enhancement-mode GaN power FETs, helping maximise efficiency in high frequency power supply designs. The LM5113 features an integrated high-side bootstrap diode, further minimising PCB real estate. The LM5113 also provides independent logic inputs for the high-side and low-side drivers, enabling flexibility for use in a variety of both isolated and non-isolated power supply topologies.

National's LM5113 is offered in a 10-pin 4x4 mm LLP package and cost Rs.73.66 ($1.65) each in quantities of 1,000. Samples are available now and production quantities will be available in September.

Comment on "100V gate driver designed for GaN FE..."
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.


Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

Back to Top