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LNA modules target base transceiver station apps

Posted: 08 Jun 2011     Print Version  Bookmark and Share

Keywords:LNA  front-end receiver  switch 

Avago Technologies unveils a set of high-power switch and low-noise amplifier (LNA) modules designed for front-end receivers in TD-SCDMA and TD-LTE base transceiver station (BTS) applications.

According to Avago, the ALM-12x24 LNA modules can replace existing three-piece discrete solutions, resulting in significant board space savings for BTS designs with eight transceiver channels in a single radio card.

The modules can also shorten design cycle time by eliminating the need for tuning with external matching circuitry and offer best-in class noise performance, high-gain and high linearity from a compact package, Avago said.

The modules integrate a high-power 50W Single Pole, Double Throw (SPDT) switch, a first-stage LNA and a second-stage high-linearity amplifier in an 8mm x 8mm package.

Constructed with an Avago PIN diode, the SPDT switch prevents the LNA from damage by high-power signals from the transmit chain when the antenna is mismatch. The LNA and high-linearity amplifier uses the company's proprietary 0.25µm GaAs Enhancement-mode pHEMT process to achieve robust RF performance.

According to Avago, the modules are its answer to the industry's need to provide optimum coverage with the best signal quality in a crowded spectrum with their low-noise figure (NF) design. Receiver sensitivity is the most critical requirement in a BTS receiver's design, and LNA selection greatly affects the receiver's performance, the company said.

The design of the modules also features linearity that enhances the receiver's ability to distinguish between wanted and spurious signals that are closely spaced. Output third-order intercept (OIP3) is used to specify linearity.

The ALM-12124 module covers 1880-2025MHz with 0.8dB NF and 36.4dBm OIP3 typical performance at 1900MHz in receiver mode, while ALM-12224 module covers 2300-2400MHz with 0.99dB NF and 38.5dBm OIP3 typical performance at 2400MHz in receiver mode.

Other features of the product are 50dB isolation between the first and second stage amplifiers, enabling external addition of an attenuator or RF filter without affecting the overall module performance; high power handling capability of 47.5dBm; low distortion silicon PIN diode technology; and highly reliable MSL2a rating and lead free package.

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