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MLC NAND chip packs 64Gb, DDR 2 interface

Posted: 16 May 2011     Print Version  Bookmark and Share

Keywords:memory chip  64Gb NAND  toggle 

Samsung Electronics Co. Ltd is offering a toggle DDR 2.0 multi-level-cell (MLC) NAND flash memory chip that features a 64Gb density. The company said the high density is made possible by an advanced 20nm-class process technology and is targeting the product at mobile devices, such as smartphones, tablets and solid state drives (SSDs).

The IC can transmit data at a bandwidth of up to 400Mbps, providing a ten-fold increase over the 40Mbps Single Data Rate (SDR) NAND flash in widespread use, and a three-fold boost over the 133Mbps toggle DDR, 32Gb NAND flash memory, which Samsung was first to manufacture in 2009.

NAND flash market to grow at 54% CAGR
Samsung's announcement quotes an IHS iSuppli report that predicts the worldwide NAND flash memory market will continue to steadily grow from approximately 11 billion 1GB equivalent units in 2010 to 94 billion 1GB equivalent units in 2015 with a CAGR of 54 per cent. In addition, shipments of NAND flash memory with 64Gb or higher density are expected to account for approximately 70 per cent of total NAND flash memory shipments in 2012, a huge increase from the three per cent level in 2010.
VLSI Research recently announced a much slower growth in NAND Flash this year (see 2011 IC growth forecast pegged at 8.9%).
The high bandwidth of toggle DDR 2 is expected to better support the ongoing shift towards advanced interfaces, as more mobile and consumer electronics devices requiring added performance and higher densities adopt new interfaces such as USB 3.0 and the 6Gbps SATA.

Furthermore, the chip offers approximately 50 per cent increase in productivity over the 20nm 32Gb MLC NAND chips with a toggle DDR interface and more than doubles the productivity over 30nm class 32Gb MLC NAND.

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