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SiGe process targets high-speed comm protocols

Posted: 02 May 2011     Print Version  Bookmark and Share

Keywords:SiGe foundry process  0.18micron SiGe technology  high-speed interfaces 

TowerJazz Inc. debuts its third-generation 0.18micron SiGe technology, the SBC18H3 silicon germanium (SiGe) foundry process that offers transistors with 240GHz Ft and 260GHz Fmax.

Built on the same platform used for the prior two TowerJazz SiGe processes, the latest technology addresses next-generation needs for high-speed interfaces in communication protocols such as Thunderbolt, optical fibre and high-data rate wireless by improving performance while reducing noise and power consumption of key building blocks. SBC18H3 also targets applications such as automotive collision avoidance systems, millimeter-wave radar and GHz imaging.

SBC18H3 process design kits (PDKs) include mm-wave components important for high-speed designs such as a transmission-line tool-box, p-i-n diodes for RF switching and support for small-size MIM capacitors.

Tower Semiconductor Ltd, a speciality foundry chipmaker which trades under the name TowerJazz, recently announced it is proposing to buy a wafer fab belonging to Micron Technology Inc. in Nishiwaki City, Hyogo prefecture, Japan, for Rs.639.27 crore ($140 million).

- Mark LaPedus
  EE Times

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