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GaN FETs better current rad-hard silicon MOSFETs

Posted: 23 Mar 2011     Print Version  Bookmark and Share

Keywords:Gallium Nitride  GaN  FETs  satellites  power conversion 

Microsemi Corp. says its Gallium Nitride FETs built on a wide band gap material increases performance over current radiation-hardened silicon MOSFETs targeting satellites and other military power conversion, point-of-load, and high speed switching applications.

The FETs provide low parasitic capacitance which reduces switching losses by at least 50 per cent resulting in higher efficiency circuits; low on-resistance to minimise conduction losses resulting in circuit efficiency gains; and radiation performance.

Microsemi is working with the Efficient Power Conversion (EPC) organisation to develop a line of high performance FETS for high reliability space and military applications. The first new devices will be offered by Microsemi in voltages of 40V, 60V, 100V, 150V, and 200V and will have drain-to-source on-resistance values of 4mΩ to 100mΩ. The devices are expected to deliver high temperature performance with junction temperatures approaching 300°C. A family of standard through-hole and surface-mount packages in addition to flip chip die will be available.

Preliminary radiation testing of the devices has shown high single event effect (SEE) and total ionizing dose (TID) capability. This allows the devices to operate in high orbit and deep space missions without degradation to performance. Microsemi will work closely with the Defence Logistics Agency (DLA) to define the test specifications within standard military drawings (MIL-PRF-19500 slashsheets), assuring customers of the performance capabilities of these products.

Prototype customer samples are expected to be available by mid-2011 with production quantities by November 2011.

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