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Industry proposes new mobile DRAM specs

Posted: 25 Feb 2011     Print Version  Bookmark and Share

Keywords:mobile DRAM  LPDDR2 technology  through-silicon-via 

Claiming an industry first, Samsung Electronics Co. Ltd recently began sampling a monolithic 4Gb, LPDDR2 DRAM using 30nm class technology. The chip will be used in high-end mobile applications, such as smartphones and tablet PCs. The device runs at up to 1,066Mbit/s.

Bringing 3D devices based on TSV is taking longer than expected. On the other hand, there appears to be a strong push for wide I/O DRAM technology, based on TSV. A group led by Sematech has targeted wide I/O as a driver for TSV production.

At ISSCC, Samsung announced the development of a 1Gb DRAM with a 512-pin wide I/O interface intended for mobile applications, such as smartphones and tablet computers. The chip is implemented in a manufacturing process technology somewhere between 50- and 59nm.

It will be reportedly housed in a 3D package, based on TSV technology. Shipments are targeted for 2013, said Oh-Hyun Kwon, president of Samsung's semiconductor business, during a keynote.

Wide I/O DRAM is promising, but there are some significant manufacturing costs issues associated with the TSV technology, Qualcomm's Talluri said in a brief interview.

TSV still suffers from a lack of standards and EDA tools. Still, Elpida, IBM, Intel, Samsung, TSMC, and a plethora of others are investing millions of dollars in TSV technology.

During the panel session, Talluri outlined the proposed specifications for wide I/O, which is a 4-channel technology that could have 1-2GB densities. It is said to transfer data at 12.8- or 24.6Gbit/s. It is slated for mass production in 2014 or 2015.

- Mark LaPedus
  EE Times


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