Global Sources
EE Times-India
Stay in touch with EE Times India
EE Times-India > Power/Alternative Energy
Power/Alternative Energy  

MOSFETs tailored for switching inductive loads

Posted: 23 Dec 2010     Print Version  Bookmark and Share

Keywords:MOSFET  self-protected  IntelliFET 

Diodes Inc. adds to its IntelliFET range of self-protected MOSFETs with the 60V, 75mΩ (typical) rated single N-channel ZXMS6006DG/SG and dual N-channel ZXMS6006DT8 targeting automotive and industrial applications with customisation for switching inductive loads, such as motors, relays and lamps at low frequencies.

These self-protected MOSFETs provide thermal shutdown, short circuit, over voltage, over current and input ESD protection facilities allowing circuit designers to significantly elevate circuit reliability.

The dual channel ZXMS6006DT8 integrates over-temperature, over-current, over-voltage and input ESD protection on each of their two independent and isolated switching channels. It offers a thermal efficiency 30 per cent better than comparable competing SO8 devices, giving a cooler run and more reliable end applications.

Meanwhile, the single channel ZXMS6006DG (drain connected to tab) and ZXMS6006SG (drain connected to source) are provided in the compact high power dissipation SOT223 package and bring a cost effective alternative to competing solutions. Both devices have nominal load current ratings of 2.8A, at an input voltage of 5V, and have an avalanche clamping rating of 490mJ.

Find related content:
  - company/industry news
  - new products
  - technical papers
  - application notes

Comment on "MOSFETs tailored for switching induc..."
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.


Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

Back to Top