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Intel reports progress on QWFETs

Posted: 08 Dec 2010     Print Version  Bookmark and Share

Keywords:QWFET  quantum well  field effect transistor  silicon 

Intel Corp. says it has made progress in the area of quantum well field effect transistors (QWFETs) at a paper presentation at the International Electron Device Meeting (IEDM).

In 2008, Intel demonstrated for the first time a high-speed, low-power quantum well field effect transistor. The p-channel structure was based on a 40nm indium antimonide (InSb) material, which was said to achieve a cut-off frequency (fT) of 140GHz at a supply voltage of 0.5V.

Transistors made on III-V materials are being explored in research as a means to provide improved performance and low power capabilities beyond what silicon may be able to provide.

In a paper at the International Electron Device Meeting (IEDM) here this week, Intel has taken a step forward with the technology. ''In this work, non-planar, multi-gate InGaAs quantum well field effect transistors (QWFETs) with high-k gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations (LSIDE) of 5nm are reported for the first time,'' according to the paper.

''The high-k gate dielectric formed on this non-planar device structure has the expected thin TOXE of 20.5� with low JG, and high quality gate dielectric interface. The simplified S/D scheme is needed for the non-planar architecture while achieving significant reduction in parasitic resistance,'' according to the paper.

''Compared to the planar high-k InGaAs QWFET with similar TOXE, the non-planar, multi-gate InGaAs QWFET shows significantly improved electrostatics due to better gate control. The results of this work show that non-planar, multi-gate device architecture is an effective way to improve the scalability of III-V QWFETs for low power logic applications,'' according to the firm.

- Mark LaPedus
EE Times

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